Chemical Mechanical Polishing in Silicon Processing by R.K. Willardson and Eicke R. Weber (Eds.)

By R.K. Willardson and Eicke R. Weber (Eds.)

For the reason that its inception in 1966, the sequence of numbered volumes often called Semiconductors and Semimetals has distinctive itself during the cautious collection of recognized authors, editors, and members. The Willardson and Beer sequence, because it is celebrated, has succeeded in generating various landmark volumes and chapters. not just did lots of those volumes make an effect on the time in their e-book, yet they remain well-cited years after their unique free up. lately, Professor Eicke R. Weber of the college of California at Berkeley joined as a co-editor of the sequence. Professor Weber, a well known professional within the box of semiconductor fabrics, will additional give a contribution to carrying on with the sequence' culture of publishing well timed, hugely correct, and long-impacting volumes. a number of the fresh volumes, resembling Hydrogen in Semiconductors, Imperfections in III/V fabrics, Epitaxial Microstructures, High-Speed Heterostructure units, Oxygen in Silicon, and others promise that this practice might be maintained or even expanded.Reflecting the really interdisciplinary nature of the sphere that the sequence covers, the volumes in Semiconductors and Semimetals were and may stay of serious curiosity to physicists, chemists, fabrics scientists, and machine engineers in sleek undefined.

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Although the flexible membrane confines the pressure, its primary purpose is to respond homogeneously to the pneumatic pressure. In so doing it applies pressure uniformly across the wafer. ” A key process parameter in this design is the differential pressure between the cavity and the ambient. There are other similar inventions involving the use of membranes to assist in applying pressure uniformly dating from the same time [28-311. This approach has proved to be so successful that it has spawned a cottage industry of carrier designs based on the use of hydrostatic pressure.

Holland, “Advantages of Orbital CMP Technology for Oxide and Metal Planarization,” presented at Semicon Taiwan, Hsinchu, Taiwan, Sept. 22-24, 1997. 2 EQUIPMENT 43 15. N. A. Hoshizaki, R. Williams, J. D. Buhler, C. A. Reichel, W. K. Hollywood, R. de Geuss, L. L. Lee, US. Patent #5,759,918, Jun. 2, 1998. 16. J. R. Breivogel, S. F. Louke, M. R. Oliver, L. D. Yau, C. E. S. Patent #5,554,064, issued Sept. 10, 1996. 17. A. R. Baker, “The Origin of the Edge Effect in Chemical Mechanical Planarization,” presented at the ECS Fall 1996 meeting, San Antonio, TX.

For production convenience, the grooves are Cartesian. The ensuing motion of the grooves, especially of the groove intersections, against the wafer causes a spirographic pattern to form if compound motion is not added. Pressure is applied by inflating two bladders, one behind the wafer backing 15 2 EQUIPMENT FIG. 3. Schematic diagram of a third-generation, orbital CMP head. plate and the other under the flexible pad-backer assembly. A wide retaining ring is used to ensure the pad remains compressed during the entire polishing cycle.

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